Modeling of interelectrode parasitic elements of V-groove SiC MOSFET

Performance Analysis of a 1200 V SiC MOSFET Based 10 kVA Voltage Source Inverter

Silicon carbide (SiC) MOSFET has the potential to replace silicon (Si) IGBT due to its superior switching performance. However due to presence of parasitic inductance in converter layout, device voltage and current experience overshoots and oscillations during device switching. These undesired overshoots increase switching loss. In the context of these parasitic inductances, the performance of ...

Modeling of parasitic elements in high voltage multiplier modules

Characterization and modeling of 1200V – 100A N – channel 4H-SiC MOSFET

The static characteristics of CREE 1200V/100A 4H-SiC MOSFET have been fully characterized at temperatures ranging from 0°C to 150°C. The distinct characteristics of high power SiC MOSFET compared with the silicon counterparts are analyzed and explained. A novel physics-based analytical model for SiC MOSFET has been developed by using the MAST language and simulated with SABER software to expres...

Design, Modeling, and Characterization of Power MOSFET in 4H-SiC for Extreme Environment Applications

Silicon Carbide (SiC) is an emerging technology for extreme environment electronics applications. In this paper, an analytical model for vertical DIMOS transistor structure in SiC is presented. The model takes into account the various short channel effects in the DIMOS channel region as well as the velocity saturation effect in the drift region. A good agreement between the analytical model and...

Mosfet Modeling

A n improved SPICE model has been developed by Fairchild engineers for the simulation of trench power devices using the BSIM3 MOSFET model. The new model architecture seeks to eliminate shortcomings in the level 1 and level 3 subcircuit methods used extensively for modeling MOSFETs in power circuits. The new model offers excellent correlation to product data, transistor scaling not possible wit...